Radio-frequency switch having stack of non-uniform elements

ABSTRACT

A switch fabrication method can include forming a plurality of elements, and connecting the elements in series between a first terminal and a second terminal, such that the elements include a first end element connected to the first terminal and a second end element connected to the second terminal. Each element can have a parameter such that the elements have a distribution of parameter values that decreases from the first end element for at least half of the elements to a minimum parameter value corresponding to an element between the first end element and the second end element. The minimum parameter value can be less than the parameter value of the second end element, and the parameter value of the first end element can be greater than or equal to the parameter value of the second end element.

INCORPORATION BY REFERENCE TO ANY PRIORITY APPLICATIONS

Any and all applications for which a foreign or domestic priority claimis identified in the Application Data Sheet as filed with the presentapplication are hereby incorporated by reference under 37 CFR 1.57. Thisapplication is a continuation of U.S. application Ser. No. 15/666,147filed Aug. 1, 2017, entitled STACK DEVICE HAVING VOLTAGE COMPENSATION,which is a continuation of U.S. application Ser. No. 14/451,321 filedAug. 4, 2014, entitled FIELD-EFFECT TRANSISTOR STACK VOLTAGECOMPENSATION, which claims priority to and the benefit of the filingdate of U.S. Provisional Application No. 61/863,043 filed Aug. 7, 2013,entitled FIELD-EFFECT TRANSISTOR STACK VOLTAGE COMPENSATION, thebenefits of the filing dates of which are hereby claimed and thedisclosures of which are hereby expressly incorporated by referenceherein in their entirety.

BACKGROUND Field

The present disclosure generally relates to radio-frequency (RF)switches based on stacks of switching elements such as field-effecttransistors (FETs).

Description of the Related Art

In some radio-frequency (RF) applications, an RF switch can include aplurality of switching elements, such as field-effect transistors(FETs), arranged in a stack configuration. Such a stack configurationcan facilitate, for example, handling of power by the RF switch.Typically, an RF switch having a higher FET stack height can handlehigher power.

SUMMARY

In accordance with some implementations, the present disclosure relatesto a switching device that includes a first terminal and a secondterminal. The switching device further includes a plurality of switchingelements connected in series between the first and terminal and thesecond terminal. Each switching element has a parameter that isconfigured to yield a desired voltage drop profile among the connectedswitching elements.

In some embodiments, each of the plurality of switching elements caninclude a diode. In such embodiments, the parameter can include ajunction area. The parameter can also include a number ofparallel-diodes that yield the diode of the switching element.

In some embodiments, each of the plurality of switching elements caninclude a field-effect transistor (FET) having an active region, and asource contact, a drain contact and a gate formed on the active region.The FET can be, for example, a metal-oxide-semiconductor FET (MOSFET).The FET can be implemented as a silicon-on-insulator (SOI) device. Insome embodiments, the parameter can include a width of the gate. In someembodiments, the parameter can include a number of fingers associatedwith the gate.

In some embodiments, the FET can be implemented as a fingerconfiguration device such that the gate includes a number of rectangularshaped gate fingers. Each gate finger can be implemented between arectangular shaped source finger of the source contact and a rectangularshaped drain finger of the drain contact. The width of the gate can be adimension corresponding to an overlap between the gate fingers and theactive region.

In some embodiments, the desired voltage drop profile can beapproximately uniform among the connected switching elements. In someembodiments, the first terminal can be an input terminal and the secondterminal can be an output terminal. The switching device can be aradio-frequency (RF) switching device.

In some embodiments, the plurality of switching elements can beconfigured to provide bi-directional functionality. Either of the firstterminal and the second terminal can be an input terminal, and the otherterminal can be an output terminal.

In some implementations, the present disclosure relates to aradio-frequency (RF) switching device implemented as a stack offield-effect transistors (FETs). The stack includes a plurality of FETsconnected in series, with each FET having an active region, a sourcecontact formed on the active region, a drain contact formed on theactive region, and a gate formed on the active region. The stack furtherincludes at least some of the FETs having gates with respectivevariable-dimensions.

In some embodiments, the variable-dimensions can be selected to yield adesirable voltage drop profile for the respective FETs. The desirablevoltage drop profile can include an approximately uniform distributionof voltage drops associated with the respective FETs.

In some embodiments, the variable-dimensions can include variable widthsof the respective gates. The variable gate width can changemonotonically between first and second ends of the connected FETs. Thefirst and second ends of the connected FETs can be configured as aninput and an output, respectively, and the variable gate width candecrease monotonically from the input to the output.

In some embodiments, the variable-dimensions can include variablenumbers of gate fingers associated with the respective gates.

In a number of teachings, the present disclosure relates to asemiconductor die that includes a semiconductor substrate. The diefurther includes a plurality of field-effect transistors (FETs) formedon the semiconductor substrate, with the FETs being connected in series.Each FET includes an active region, a source contact formed on theactive region, a drain contact formed on the active region, and a gateformed on the active region. At least some of the FETs have gates withrespective variable-dimensions.

According to some implementations, the present disclosure relates to aradio-frequency (RF) switching module that includes a packagingsubstrate configured to receive a plurality of components. The RFswitching module further includes a die mounted on the packagingsubstrate. The die has a switching circuit, and the switching circuitincludes a plurality of field-effect transistors (FETs) connected inseries. Each FET has an active region, a source contact formed on theactive region, a drain contact formed on the active region, and a gateformed on the active region. At least some of the FETs have gates withrespective variable-dimensions.

In some implementations, the present disclosure relates to a wirelessdevice that includes a transmitter and a power amplifier incommunication with the transmitter. The power amplifier is configured toamplify an RF signal generated by the transmitter. The wireless devicefurther includes an antenna configured to transmit the amplified RFsignal. The wireless device further includes a switching circuitconfigured to route the amplified RF signal from the power amplifier tothe antenna. The switching circuit including a plurality of switchingelements connected in series. Each switching element has a parameterthat is configured to yield a desired voltage drop profile among theconnected switching elements.

In a number of implementations, the present disclosure relates to anelectronic device having a stack configuration. The device includes afirst terminal and a second terminal. The device further includes aplurality of elements connected in series between the first terminal andthe second terminal. Each element has a capacitance to yield a desireddistribution of capacitance values among the elements.

In some embodiments, the desired distribution can include asubstantially uniform distribution. In some embodiments, each of theplurality of elements can include a diode. In some embodiments, each ofthe plurality of elements can include a field-effect transistor (FET)having an active region, and a source contact, a drain contact and agate formed on the active region. The capacitance of each FET can beselected based on a width of the gate of the FET. The capacitance ofeach FET can be selected based on a number of fingers associated withthe gate of the FET. The device can be, for example, a radio-frequency(RF) switching device.

In some embodiments, each of the plurality of elements can include amicroelectromechanical systems (MEMS) device. The capacitance of eachMEMS device can be selected based on a contact area associated with theMEMS device. The capacitance of each MEMS device can be selected basedon a number of parallel-MEMS devices that yield the MEMS device.

For purposes of summarizing the disclosure, certain aspects, advantagesand novel features of the inventions have been described herein. It isto be understood that not necessarily all such advantages may beachieved in accordance with any particular embodiment of the invention.Thus, the invention may be embodied or carried out in a manner thatachieves or optimizes one advantage or group of advantages as taughtherein without necessarily achieving other advantages as may be taughtor suggested herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts a radio-frequency (RF) switch having variable-dimensionswitching elements.

FIG. 2A shows that in some embodiments, the switching elements of FIG. 1can include variable-dimension field-effect transistors (FETs).

FIG. 2B shows that in some embodiments, the switching elements of FIG. 1can include variable-dimension diodes.

FIG. 2C shows that in some embodiments, the switching elements of FIG. 1can include variable-dimension MEMS devices.

FIG. 3 shows an example stack having a plurality of FETs electricallyconnected in series.

FIG. 4 shows a circuit representation of the example stack of FIG. 3.

FIG. 5 shows an example of an RF switch having a stack of a plurality ofFETs.

FIG. 6 shows an example RF switch where dimension variation of the FETscan be implemented as different gate widths.

FIG. 7 shows an example stack of 10 FETs having a generally constantgate width of Wg.

FIG. 8 shows an example of simulated data where relative voltage drop ateach of the FETs of FIG. 7 is plotted against the FET number along thestack.

FIG. 9 shows an example stack of 10 FETs with varying gate widthsWg1-Wg10.

FIG. 10 shows an example of simulated data where relative voltage dropat each of the FETs of FIG. 9 is plotted against the FET number alongthe stack.

FIG. 11 shows another example FET stack where dimension variation can beimplemented as different numbers of gate fingers.

FIG. 12A shows that in some embodiments, a stack having one or morefeatures as described herein can be configured so that an input signalis preferably received on one end of the stack.

FIG. 12B shows that in some embodiments, a stack having one or morefeatures as described herein can be configured so that an input signalcan be received on either end of the stack.

FIG. 13 shows an example stack having the functionality of FIG. 12B,implemented in the context of varying gate widths.

FIG. 14 shows an example stack having the functionality of FIG. 12B,implemented in the context of varying numbers of gate fingers.

FIG. 15 shows that in some embodiments, a stack having one or morefeatures as described herein can be implemented as N elementselectrically connected in series, with an i-th element having acapacitance C(i).

FIG. 16 shows that in some embodiments, the stack of FIG. 12 can beconfigured to yield a desirable capacitance profile for the elements,such as, for example, the capacitance values of the elements beingapproximately uniform.

FIG. 17 depicts an RF switch configured to switch one or more signalsbetween one or more poles and one or more throws.

FIG. 18 shows that in some embodiments, the RF switch of FIG. 14 caninclude an RF core and an energy management (EM) core.

FIG. 19 shows a more detailed example configuration of the RF core ofFIG. 15, implemented in an example SPDT (single-pole double-throw)configuration.

FIG. 20 shows an example where the SPDT configuration of FIG. 19 isimplemented with a stack of FETs for each of a series arm and a shuntarm associated with each of the two throws.

FIG. 21 shows that FETs having one or more features as described hereincan be controlled by a circuit configured to provide bias and/orcoupling functionality.

FIG. 22 shows examples of how biasing and/or coupling of different partsof one or more FETs can be implemented.

FIGS. 23A and 23B show plan and side sectional views of an examplefinger-based FET device implemented on silicon-on-insulator (SOI).

FIGS. 24A and 24B show plan and side sectional views of an examplemultiple-finger FET device implemented on SOI.

FIGS. 25A-25D show non-limiting examples of how one or more features ofthe present disclosure can be implemented on one or more semiconductordie.

FIGS. 26A and 26B show that one or more die having one or more featuresdescribed herein can be implemented in a packaged module.

FIG. 27 shows a schematic diagram of an example switching configurationthat can be implemented in a module such as the example of FIGS. 26A and26B.

FIG. 28 depicts an example wireless device having one or moreadvantageous features described herein.

DETAILED DESCRIPTION OF SOME EMBODIMENTS

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

In some radio-frequency (RF) applications, an RF switch can include aplurality of switching elements, such as field-effect transistors(FETs), arranged in a stack configuration. Such a stack configurationcan facilitate, for example, appropriate handling of power. For example,a higher FET stack height can withstand higher power under, for example,a mismatch condition. RF applications that utilize such RF switches caninclude, for example, antenna tuning or some other switchingapplications involving passive components (e.g., in matching networks).

Elements of an FET stack can yield their intrinsic passive capacitanceor resistance behaviors in their OFF or ON states, respectively, andsuch behaviors are typically relatively well maintained with varyinginput power. However, uneven voltage distribution across the FET stackcan lead to undesirable effects such as harmonic peaking, degradation incompression point and/or intermodulation distortion (IMD) of the switch.Such effects can be manifested in switch designs that utilizesilicon-on-insulator (SOI) technology. For example, coupling between theFET stack and ground can result in a decrease in an RF current insidethe stack, from a power input side to an output side. Such an unevencurrent inside each FET in the stack typically leads to an unevenvoltage drop across the FETs in the stack. Such an uneven current canalso result in a reduced power voltage handling capability of the stackitself, where the individual FET which handles the most voltage breaksdown at some power level.

Described herein are devices and methods that can be implemented toreduce such an uneven voltage distribution across an FET stack. Althoughdescribed in the context of FET stacks, it will be understood that oneor more features of the present disclosure can also be implemented inswitching stacks that utilize other types of switching elements. Forexample, switching stacks having diodes or microelectromechanicalsystems (MEMS) devices (e.g., MEMS capacitors or MEMS switches) asswitching elements can also benefit from implementation of one or morefeatures as described herein.

FIG. 1 schematically shows an RF switch 100 having variable-dimensionswitching elements (collectively indicated as 200). For the purpose ofdescription, it will be understood that some or all of the switchingelements can have different dimensions. It will also be understood thatvariable-dimension and variable-geometry can be used interchangeably inthe description herein. Such variable-dimension/variable-geometry caninclude, for example, different sizes, different shapes, differentconfigurations, or some combination thereof, of one or more partsassociated with the switching elements. In some implementations, suchone or more parts associated with the switching elements can include oneor more parts (or some combination thereof) that are inherent to theswitching elements. In such implementations, one can see thatadvantageous features provided by such variable-dimensions of theinherent part(s) of the switching elements can be beneficial, sinceadditional external components are not necessarily needed.

FIGS. 2A-2C show non-limiting examples of switching elements 200 havingone or more features of the present disclosure. FIG. 2A shows that insome embodiments, switching elements or stack elements 200 can includevariable-dimension field-effect transistors (FETs) 210. For the purposeof description, it will be understood that such FETs can include, forexample, metal-oxide-semiconductor FETs (MOSFETs) such as SOI MOSFETs.It will also be understood that FETs as described herein can beimplemented in other process technologies, including but not limited toHEMT, SOI, silicon-on-sapphire (SOS), and CMOS technologies.

FIG. 2B shows that in some embodiments, switching elements or stackelements 200 can include variable-dimension diodes 220. For the purposeof description, it will be understood that such diodes can include, forexample, FET-based diodes.

FIG. 2C shows that in some embodiments, switching elements or stackelements 200 can include variable-dimension MEMS devices 230. For thepurpose of description, it will be understood that such MEMS devices caninclude, for example, MEMS capacitors and other MEMS devices thatutilize similar metal routing layouts as described herein. In theexample context of MEMS capacitors, such capacitors can be utilized in,for example, a capacitor stack in a high-power varactor device.

FIG. 3 shows an example stack 210 having a plurality of FETselectrically connected in series. Although two example FETs (300 a, 300b) are shown, it will be understood that such a stack can include othernumbers of FETs. In the example, a first example FET 300 a is shown toinclude an active region 302 a having a dimension of length L1 and widthWg1. Although described in the example context of a rectangular shape,it will be understood that other shapes of active region are alsopossible. Further, it will be understood that, although various examplesare described herein in the context of finger configurations, otherconfigurations of source, drain and/or gate can also be implemented.

A plurality of source (S1) and drain (D1) contacts are shown to beimplemented in a finger configuration, with gate fingers (304 a, withgate length g1) interleaved therebetween. In some embodiments, each ofthe source and drain contacts (S1, D1) can form an ohmic metal contactwith the active region 302 a, and each of the gate fingers 304 a caninclude a metal contact coupled with the active region 302 a through agate oxide layer. Each of the source contacts S1 can be electricallyconnected to a first input node In1, and each of the drain contacts D1can be electrically connected to a first output node Out1. It will beunderstood that each of S1 and D1 can be either an input or output,depending on a given layout. Each of the gates 304 a can be electricallyconnected to a gate node G. Operation of such an FET as a switch element(e.g., by turning it ON or OFF by application of appropriate gatesignals) can be implemented in known manners.

A second example FET 300 b is shown to include an active region 302 bhaving a dimension of length L2 and width Wg2. A plurality of source(S2) and drain (D2) contacts are shown to be implemented in a fingerconfiguration, with gate fingers (304 b, with gate length g2)interleaved therebetween. In some embodiments, each of the source anddrain contacts (S2, D2) can form an ohmic metal contact with the activeregion 302 b, and each of the gate fingers 304 b can include a metalcontact coupled with the active region 302 b through a gate oxide layer.Each of the source contacts S2 can be electrically connected to a secondinput node In2, and each of the drain contacts D2 can be electricallyconnected to a first output node Out2. It will be understood that eachof S2 and D2 can be either an input or output, depending on a givenlayout. Each of the gates 304 b can be electrically connected to a gatenode G. Operation of such an FET as a switch element (e.g., by turningit ON or OFF by application of appropriate gate signals) can beimplemented in known manners.

In the example stack 210, the output (Out1) of the first FET 300 a canbe electrically connected to the input (In2) of the second FET 300 b.Accordingly, the input (In1) of the first FET 300 a can function as aninput (IN) of the stack 210, and the output (Out2) of the second FET 300b can function as an output (OUT) of the stack 210. In some embodiments,the gate nodes of the first and second FETs 300 a, 300 b can becontrolled together, independently, and any combination thereof.

For the purpose of description, a gate width can include a dimensionassociated with an overlap between a gate and its corresponding activeregion. Thus, in the example shown in FIG. 3, such a gate width can berepresented by Wg1 for the first FET 300 a, and Wg2 for the second FET300 b.

In some embodiments, one or more of the example FET parameters such asactive region length (e.g., L1, L2), gate with (e.g., Wg1, Wg2), gatelength (e.g., g1, g2) can be different among at least some of the FETsin a stack. In the context of the active region length, variation insuch an FET parameter can be implemented by, for example, differentnumbers of source-gate-drain units, length dimension (horizontal in theexample depicted in FIG. 3) of the source, drain and/or gate fingers, orany combination thereof. Non-limiting examples of such FET parametervariations are described herein in greater detail.

FIG. 4 shows a circuit representation of the example stack 210 of FIG.3. More particularly, the first and second FETs 300 a, 300 b can beconnected in series so as to yield an input (IN) and an output (OUT) forthe stack 210. Although described in such an input and output example,it will be understood that in some embodiments, each of the FETs 300 a,300 b, and therefore the stack 210, can be operated in reverse where thesource contacts act as drain contacts, and vice versa. Also, and asdescribed herein, an FET stack can include more than two FETs.

In some embodiments, an FET stack having two or more FETs can beimplemented as an RF switch. FIG. 5 shows an example of an RF switch 100having a stack 210 of a plurality of FETs (e.g., N of such FETs 300 a to300 n). Such a switch can be configured as a single-pole-single-throw(SPST) switch. Although described in the context of such an example, itwill be understood that one or more of stacks 210 can be implemented inother switch configurations.

In the example of FIG. 5, each of the FETs (300 a to 300 n) can becontrolled by its respective gate bias network 310 and body bias network312. In some implementations, such control operations can be performedin known manners.

As described herein, an RF switch such as the example of FIG. 5 caninclude variable-dimension FETs. FIG. 6 shows an example RF switch 100where such dimension variation can be implemented as different gatewidths. In the example, an FET stack 210 is shown to include FETs (300a-300 n) with their respective gate widths (Wg1-Wgn). Some or all ofsuch gate widths can be selected to be different so as to yield adesirable performance improvement for the RF switch 100. An example ofsuch a performance improvement is described herein in greater detail.

FIG. 7 shows an example stack of 10 FETs having a generally constantgate width of Wg of approximately 10 μm. Each of the 10 FETs in FIG. 7has 100 gate fingers. For clarity, electrical connections between theFETs are not shown.

For such uniform-dimension FETs, FIG. 8 shows an example of simulateddata where relative voltage drop at each of the FETs is plotted againstthe FET number along the stack. For example, there is a voltage drop ofabout 0.135 of the input voltage (5V in this example) across FET1, about0.118 of the input voltage across FET2, and so on.

In FIG. 8, one can readily see that there is significant imbalance ofvoltage drop values along the stack. It should be understood that forother configurations and architectures having constant gate width, theirvoltage imbalances will also be close to, or be similar to, the exampleof FIG. 8. Such voltage imbalances may or may not closely follow theexample of FIG. 8, but the general trend is typically similar, where thefirst FET (where the power is incident) is typically the limiting factorwith the highest voltage drop. As described herein, such an unevenvoltage distribution along the stack can result in degradation of switchperformance with respect to, for example, harmonic peaking, compressionpoint and/or intermodulation distortion (IMD). Also, at higher powerlevels, the first FET can go into breakdown before other FETs, therebylimiting the overall performance of the switch.

It is further noted that such an uneven voltage distribution can impactthe breakdown voltage performance of the stack. For example, supposethat an input voltage of 5V is provided at an input of a stack having 10FETs, and that voltage drop across each FET is substantially constant(e.g., 0.1 of the input voltage, or 0.5V, for the 10-FET example) sothat there is no voltage imbalance within the stack. Also assume thateach FET is capable of handling at least the example 5V without breakingdown. Since each FET can handle 5V, and since there is no voltageimbalance, one can expect that the example stack as a whole can handle10 times 5V, or 50V.

In a stack with an uneven voltage distribution, one can expect that anFET with the highest relative voltage drop will break down first whenthe input voltage is increased, thereby yielding a weak link within thestack. In the example of FIG. 8, such a weak link is the first FET whichhas the highest relative voltage drop value of approximately 0.135.Accordingly, a degraded breakdown voltage Vb for the example stack ofFIGS. 7 and 8 can be estimated by scaling the input voltage (e.g., 5V)with the highest relative voltage drop value (0.135), as 5/0.135, orapproximately 37V. Compared to the foregoing example of 50V for theconstant-voltage drop (among the FETs), 37V is a significant reductionin voltage handling capability of the example stack of FIGS. 7 and 8.

FIG. 9 shows an example stack 210 having 10 FETs (300 a-300 j) withrespective gate widths Wg1-Wg10. Example values of the gate widthsWg1-Wg10 are listed in Table 1. Each of the 10 FETs (300 a-300 j) inFIG. 9 has 100 gate fingers. For clarity, electrical connections betweenthe FETs are not shown.

TABLE 1 Gate width FET # Gate width value (μm) 1 Wg1 13.6 2 Wg2 11.9 3Wg3 10.8 4 Wg4 10.0 5 Wg5 9.5 6 Wg6 8.9 7 Wg7 8.5 8 Wg8 8.3 9 Wg9 8.2 10Wg10 8.5

For such variable-dimension FETs, FIG. 10 shows an example of simulateddata where relative voltage drop at each of the FETs is plotted againstthe FET number along the stack. For example, there is a voltage drop ofabout 0.103 of an input voltage (e.g., 5V) across FET1, about 0.101 ofthe input voltage across FET2, and so on. Compared to the examplevoltage distribution associated with FIGS. 7 and 8 (also shown in FIG.10), voltage imbalance is reduced drastically so as to yield a generallyeven voltage distribution. Such an even voltage distribution along thestack can result in improvement of switch performance with respect to,for example, harmonic peaking, compression point and/or intermodulationdistortion (IMD).

It is further noted that in the even voltage distribution, the highestvalue is approximately 0.103 of the input voltage (across the firstFET). Accordingly, and as described in reference to FIG. 8, a breakdownvoltage of the example stack of FIG. 9 can be estimated by scaling theinput voltage (e.g., 5V) with the weak link having the highest relativevoltage drop (e.g., 0.103 for the first FET). One can see that such anestimate desirably yields a value of 5/0.103, or approximately 48V,which is very close to the estimate for an ideal configuration that doesnot have voltage imbalance. It should also be understood that withdifferent periphery configurations, these voltage values may change; butthe relatively evenly distributed voltage profile can still be obtained.

FIG. 11 shows another example FET stack 210 where dimension variationcan be implemented as different numbers of gate fingers. The examplestack 210 includes 10 FETs (300 a-300 j) having a uniform gate width ofapproximately 10 μm. Different numbers of gate fingers in the FETs areshown as different lengths of the FETs (in FIG. 11, horizontaldimensions of the FETs).

In some embodiments, values of the numbers of gate fingers Ng1-Ng10 canbe selected based on a voltage distribution profile that is beingcompensated. For example, suppose that a given stack has a voltagedistribution profile similar to the example of FIG. 8. A revised stacksuch as the example of FIG. 11 can have values of a selected FETparameter (e.g., number of gate fingers) selected to compensate for theuneven distribution of the given stack (e.g., FIG. 8). In the example ofFIG. 9, and referring to the example values of Table 1, one can see thatvarying of the gate width parameter can compensate for the unevendistribution of the example stack of FIG. 8.

For the examples of FIGS. 9 and 11, plots of gate widths and fingernumbers, respectively, can have generally similar profiles as thevoltage distribution (of FIG. 8) that is being compensated. Moreparticularly, all of the three profiles have their highest values atFET1, decrease to the lowest values at FET9, and increase slightly atFET10. It will be understood that other FET-parameter profiles that mayor may not be correlated to a profile being compensated are alsopossible. For example, there may be an FET parameter for which itsdistribution has an inverse shape as the example voltage distributionbeing compensated. Other FET parameters and/or distribution shapes arealso possible.

In the foregoing examples, the profiles of FET-parameters (e.g., gatewidth or finger numbers) are described in the context of compensating anexisting voltage distribution profile. Such an existing voltagedistribution profile can result from measurement or modeling of, forexample, an existing switch device, modeling of a new switch design, orsome combination thereof. It will be understood that in someimplementations, such an existing voltage distribution profile (howeverobtained) is not necessarily a requirement. For example, one or morefeatures of the present disclosure can be implemented as an originaldesign parameter, instead of being utilized as a compensation orcorrection technique.

In the context of the examples described herein in reference to FIGS. 9and 11, the varying parameters (e.g., gate width and number of gatefingers) are described as having a gradient that changes generallymonotonically for some or all of the FETs in one direction. It will beunderstood, however, that other grading configurations are alsopossible. For example, a grading scheme can include a maximum or aminimum at a switching element (e.g., at or close to the middle in astack); and such a distribution may or may not be symmetric. In anotherexample, there may be more than one local extrema in a grading scheme.In yet another example, there may be one or more step functiondistribution along a stack.

In some embodiments, a grading scheme can be implemented so as to yielda desired distribution of a stack parameter. For example, a gradingscheme can be configured to yield a generally uniform distribution ofvoltage drops across the switching elements in a stack.

FIGS. 12-14 show examples of how different grading schemes can beimplemented to yield different directional functionalities of FETstacks. FIG. 12A shows that in some embodiments, a variable-dimensionFET stack 210 can be configured to have an input (IN) preferably on oneend, and therefore an output (OUT) on the other end. The FET stacks 210described herein in reference to FIGS. 9-11 are examples where inputsare preferably provided on the side of their respective first FETs 300 a(FET1), so as to accommodate the high voltage drop in the first FET.

FIG. 12B shows that in some embodiments, a variable-dimension FET stack210 having one or more features as described herein can be configured tobe bi-directional. Such a stack 210 can benefit from voltagecompensation property as described herein when an input signal isprovided to either end of the stack 210. FIG. 13 shows an example ofsuch a bi-directional stack in the context of variable gate widths. FIG.14 shows an example of such a bi-directional stack in the context ofnumbers of gate fingers. It will be understood that bi-directionalfunctionality in variable-dimension FET stacks can also be implementedwith other variations.

Referring to the example of FIG. 13, a variable-dimension FET stack 210is shown to include 10 FETs 300 a-300 j (FET1-FET10). Each of the twoend FETs (FET1, FET10) is shown to have a gate width of Wg1. Each of thesecond-to-end FETs (FET2, FET9) is shown have a gate width of Wg2.Similarly, the third (FET3, FET8), fourth (FET4, FET7) and fifth (FET5,FET6) FETs from their respective ends are shown to have gate widths ofWg3, Wg4 and Wg5, respectively. In the example of FIG. 13, the gatewidths can be selected such that Wg1>Wg2>Wg3>Wg4>Wg5. Accordingly, thesuccessive decrease in gate width of the FETs on each half of the FETstack advantageously allows a voltage drop profile on that half to becompensated as described herein.

In the example of FIG. 13, the 10 example FETs are depicted as having asymmetric gate width profile, where the highest gate width value isprovided to the end FETs, and the lowest value is provided to the middleFET(s). However, it will be understood that bi-directional functionalitycan also be implemented in non-symmetric profiles.

Referring to the example of FIG. 14, a variable-dimension FET stack 210is shown to include 10 FETs 300 a-300 j (FET1-FET10). Each of the twoend FETs (FET1, FET10) is shown to have Ng1 gate fingers. Each of thesecond-to-end FETs (FET2, FET9) is shown have Ng2 gate fingers.Similarly, the third (FET3, FET8), fourth (FET4, FET7) and fifth (FET5,FET6) FETs from their respective ends are shown to have Ng3, Ng4 and Ng5gate fingers, respectively. In the example of FIG. 14, the numbers ofgate fingers can be selected such that Ng1>Ng2>Ng3>Ng4>Ng5. Accordingly,the successive decrease in the number of gate fingers of the FETs oneach half of the FET stack advantageously allows a voltage drop profileon that half to be compensated as described herein.

The example of FIG. 14, the 10 example FETs are depicted as having asymmetric profile for the number of gate fingers, where the highestnumber of gate fingers is provided to the end FETs, and the lowestnumber is provided to the middle FET(s). However, it will be understoodthat bi-directional functionality can also be implemented innon-symmetric profiles.

As described herein, variations in switching elements are notnecessarily limited to FETs. For example, variations in a stack ofdiodes can be implemented to achieve desired performance results. In thecontext of diodes, such variations can be implemented with respect to,for example, junction area and/or multiplicity of diodes in parallel forthe switching elements.

In another example, variations in a stack of MEMS devices (e.g.,MEMS-capacitors or MEMS-switches) can be implemented to achieve desiredperformance results. In the context of such devices, variations can beimplemented with respect to, for example, contact area and/ormultiplicity of devices in parallel for the switching elements.

FIG. 15 shows that in some embodiments, a stack 400 having one or morefeatures as described herein can be implemented as N elementselectrically connected in series. For the purpose of description, N canbe an integer greater than 1. In the example stack, a given element(i-th element) is shown to have a capacitance C(i). Accordingly, Element1 has a capacitance of C(1), Element 2 has a capacitance of C(2), etc.

FIG. 16 shows that in some embodiments, a stack 400 having the exampleelements of FIG. 15 can be configured so as to yield a desirable profileof capacitance values for the elements. For example, the capacitancevalues of the elements can be approximately the same, such thatC(1)=C(2)≈ . . . ≈C(N−1)≈C(N).

In the foregoing example of characterizing and adjusting in the contextof capacitance, the gate-parameter adjustment examples of FIGS. 9 and11, each FET can be characterized in terms of capacitance associatedwith lateral dimensions of the gate. If such a capacitor-configurationis approximated as a parallel-plate capacitor, capacitance can beproportional to the lateral area of the gate, and the correspondingvoltage can be inversely proportional to the lateral area of the gate.Thus, a decrease in the gate width (FIG. 9) results in a decrease in thelateral area, and therefore an increase in the voltage of thecapacitance representation. Similarly, a decrease in the gate-fingercount (FIG. 11) results a decrease in the lateral area, and therefore anincrease in the voltage of the capacitance representation. Accordingly,a given voltage distribution (e.g., FIG. 8) can be compensated byadjusting the capacitances associated with the elements (e.g., FETs).

FIGS. 17-22 show non-limiting examples of switching applications whereone or more features of the present disclosure can be implemented. FIGS.23 and 24 show examples where one or more features of the presentdisclosure can be implemented in, for example, SOI devices. FIG. 25-28show examples of how one or more features of the present disclosure canbe implemented in different products.

Example Components of a Switching Device:

FIG. 17 schematically shows a radio-frequency (RF) switch 100 configuredto switch one or more signals between one or more poles 102 and one ormore throws 104. In some embodiments, such a switch can be based on oneor more field-effect transistors (FETs) such as silicon-on-insulator(SOI) FETs. When a particular pole is connected to a particular throw,such a path is commonly referred to as being closed or in an ON state.When a given path between a pole and a throw is not connected, such apath is commonly referred to as being open or in an OFF state.

FIG. 18 shows that in some implementations, the RF switch 100 of FIG. 17can include an RF core 110 and an energy management (EM) core 112. TheRF core 110 can be configured to route RF signals between the first andsecond ports. In the example single-pole-double-throw (SPDT)configuration shown in FIG. 18, such first and second ports can includea pole 102 a and a first throw 104 a, or the pole 102 a and a secondthrow 104 b.

In some embodiments, EM core 112 can be configured to supply, forexample, voltage control signals to the RF core. The EM core 112 can befurther configured to provide the RF switch 100 with logic decodingand/or power supply conditioning capabilities.

In some embodiments, the RF core 110 can include one or more poles andone or more throws to enable passage of RF signals between one or moreinputs and one or more outputs of the switch 100. For example, the RFcore 110 can include a single-pole double-throw (SPDT or SP2T)configuration as shown in FIG. 18.

In the example SPDT context, FIG. 19 shows a more detailed exampleconfiguration of an RF core 110. The RF core 110 is shown to include asingle pole 102 a coupled to first and second throw nodes 104 a, 104 bvia first and second transistors (e.g., FETs) 120 a, 120 b. The firstthrow node 104 a is shown to be coupled to an RF ground via an FET 122 ato provide shunting capability for the node 104 a. Similarly, the secondthrow node 104 b is shown to be coupled to the RF ground via an FET 122b to provide shunting capability for the node 104 b.

In an example operation, when the RF core 110 is in a state where an RFsignal is being passed between the pole 102 a and the first throw 104 a,the FET 120 a between the pole 102 a and the first throw node 104 a canbe in an ON state, and the FET 120 b between the pole 102 a and thesecond throw node 104 b can be in an OFF state. For the shunt FETs 122a, 122 b, the shunt FET 122 a can be in an OFF state so that the RFsignal is not shunted to ground as it travels from the pole 102 a to thefirst throw node 104 a. The shunt FET 122 b associated with the secondthrow node 104 b can be in an ON state so that any RF signals or noisearriving at the RF core 110 through the second throw node 104 b isshunted to the ground so as to reduce undesirable interference effectsto the pole-to-first-throw operation.

Although the foregoing example is described in the context of asingle-pole-double-throw configuration, it will be understood that theRF core can be configured with other numbers of poles and throws. Forexample, there may be more than one poles, and the number of throws canbe less than or greater than the example number of two.

In the example of FIG. 19, the transistors between the pole 102 a andthe two throw nodes 104 a, 104 b are depicted as single transistors. Insome implementations, such switching functionalities between the pole(s)and the throw(s) can be provided by switch arm segments, where eachswitch arm segment includes a plurality of transistors such as FETs.

An example RF core configuration 130 of an RF core having such switcharm segments is shown in FIG. 20. In the example, the pole 102 a and thefirst throw node 104 a are shown to be coupled via a first switch armsegment 140 a. Similarly, the pole 102 a and the second throw node 104 bare shown to be coupled via a second switch arm segment 140 b. The firstthrow node 104 a is shown to be capable of being shunted to an RF groundvia a first shunt arm segment 142 a. Similarly, the second throw node104 b is shown to be capable of being shunted to the RF ground via asecond shunt arm segment 142 b.

In an example operation, when the RF core 130 is in a state where an RFsignal is being passed between the pole 102 a and the first throw node104 a, all of the FETs in the first switch arm segment 140 a can be inan ON state, and all of the FETs in the second switch arm segment 104 bcan be in an OFF state. The first shunt arm 142 a for the first thrownode 104 a can have all of its FETs in an OFF state so that the RFsignal is not shunted to ground as it travels from the pole 102 a to thefirst throw node 104 a. All of the FETs in the second shunt arm 142 bassociated with the second throw node 104 b can be in an ON state sothat any RF signals or noise arriving at the RF core 130 through thesecond throw node 104 b is shunted to the ground so as to reduceundesirable interference effects to the pole-to-first-throw operation.

Again, although described in the context of an SP2T configuration, itwill be understood that RF cores having other numbers of poles andthrows can also be implemented.

In some implementations, a switch arm segment (e.g., 140 a, 140 b, 142a, 142 b) can include one or more semiconductor transistors such asFETs. In some embodiments, an FET may be capable of being in a firststate or a second state and can include a gate, a drain, a source, and abody (sometimes also referred to as a substrate). In some embodiments,an FET can include a metal-oxide-semiconductor field effect transistor(MOSFET). In some embodiments, one or more FETs can be connected inseries forming a first end and a second end such that an RF signal canbe routed between the first end and the second end when the FETs are ina first state (e.g., ON state).

At least some of the present disclosure relates to how an FET or a groupof FETs can be controlled to provide switching functionalities indesirable manners. FIG. 21 schematically shows that in someimplementations, such controlling of an FET 120 can be facilitated by acircuit 150 configured to bias and/or couple one or more portions of theFET 120. In some embodiments, such a circuit 150 can include one or morecircuits configured to bias and/or couple a gate of the FET 120, biasand/or couple a body of the FET 120, and/or couple a source/drain of theFET 120.

Schematic examples of how such biasing and/or coupling of differentparts of one or more FETs are described in reference to FIG. 22. In FIG.22, a switch arm segment 140 (that can be, for example, one of theexample switch arm segments 140 a, 140 b, 142 a, 142 b of the example ofFIG. 20) between nodes 144, 146 is shown to include a plurality of FETs120. Operations of such FETs can be controlled and/or facilitated by agate bias/coupling circuit 150 a, and a body bias/coupling circuit 150c, and/or a source/drain coupling circuit 150 b.

Gate Bias/Coupling Circuit

In the example shown in FIG. 22, the gate of each of the FETs 120 can beconnected to the gate bias/coupling circuit 150 a to receive a gate biassignal and/or couple the gate to another part of the FET 120 or theswitch arm 140. In some implementations, designs or features of the gatebias/coupling circuit 150 a can improve performance of the switch arm140. Such improvements in performance can include, but are not limitedto, device insertion loss, isolation performance, power handlingcapability and/or switching device linearity.

Body Bias/Coupling Circuit

As shown in FIG. 22, the body of each FET 120 can be connected to thebody bias/coupling circuit 150 c to receive a body bias signal and/orcouple the body to another part of the FET 120 or the switch arm 140. Insome implementations, designs or features of the body bias/couplingcircuit 150 c can improve performance of the switch arm 140. Suchimprovements in performance can include, but are not limited to, deviceinsertion loss, isolation performance, power handling capability and/orswitching device linearity.

Source/Drain Coupling Circuit

As shown in FIG. 22, the source/drain of each FET 120 can be connectedto the coupling circuit 150 b to couple the source/drain to another partof the FET 120 or the switch arm 140. In some implementations, designsor features of the coupling circuit 150 b can improve performance of theswitch arm 140. Such improvements in performance can include, but arenot limited to, device insertion loss, isolation performance, powerhandling capability and/or switching device linearity.

Examples of Switching Performance Parameters: Insertion Loss

A switching device performance parameter can include a measure ofinsertion loss. A switching device insertion loss can be a measure ofthe attenuation of an RF signal that is routed through the RF switchingdevice. For example, the magnitude of an RF signal at an output port ofa switching device can be less than the magnitude of the RF signal at aninput port of the switching device. In some embodiments, a switchingdevice can include device components that introduce parasiticcapacitance, inductance, resistance, or conductance into the device,contributing to increased switching device insertion loss. In someembodiments, a switching device insertion loss can be measured as aratio of the power or voltage of an RF signal at an input port to thepower or voltage of the RF signal at an output port of the switchingdevice. Decreased switching device insertion loss can be desirable toenable improved RF signal transmission.

Isolation

A switching device performance parameter can also include a measure ofisolation. Switching device isolation can be a measure of the RFisolation between an input port and an output port an RF switchingdevice. In some embodiments, it can be a measure of the RF isolation ofa switching device while the switching device is in a state where aninput port and an output port are electrically isolated, for examplewhile the switching device is in an OFF state. Increased switchingdevice isolation can improve RF signal integrity. In certainembodiments, an increase in isolation can improve wireless communicationdevice performance.

Intermodulation Distortion

A switching device performance parameter can further include a measureof intermodulation distortion (IMD) performance. Intermodulationdistortion (IMD) can be a measure of non-linearity in an RF switchingdevice.

IMD can result from two or more signals mixing together and yieldingfrequencies that are not harmonic frequencies. For example, suppose thattwo signals have fundamental frequencies f₁ and f₂ (f₂>f₁) that arerelatively close to each other in frequency space. Mixing of suchsignals can result in peaks in frequency spectrum at frequenciescorresponding to different products of fundamental and harmonicfrequencies of the two signals. For example, a second-orderintermodulation distortion (also referred to as IMD2) is typicallyconsidered to include frequencies f₁+f₂ f₂−f₁, 2f₁, and 2f₂. Athird-order IMD (also referred to as IMD3) is typically considered toinclude 2f₁−f₂, f₁+2f₂, f₁−2f₂. Higher order products can be formed insimilar manners.

In general, as the IMD order number increases, power levels decrease.Accordingly, second and third orders can be undesirable effects that areof particular interest. Higher orders such as fourth and fifth orderscan also be of interest in some situations.

In some RF applications, it can be desirable to reduce susceptibility tointerference within an RF system. Non linearity in RF systems can resultin introduction of spurious signals into the system. Spurious signals inthe RF system can result in interference within the system and degradethe information transmitted by RF signals. An RF system having increasednon-linearity can demonstrate increased susceptibility to interference.Non-linearity in system components, for example switching devices, cancontribute to the introduction of spurious signals into the RF system,thereby contributing to degradation of overall RF system linearity andIMD performance.

In some embodiments, RF switching devices can be implemented as part ofan RF system including a wireless communication system. IMD performanceof the system can be improved by increasing linearity of systemcomponents, such as linearity of an RF switching device. In someembodiments, a wireless communication system can operate in a multi-bandand/or multi-mode environment. Improvement in intermodulation distortion(IMD) performance can be desirable in wireless communication systemsoperating in a multi-band and/or multi-mode environment. In someembodiments, improvement of a switching device IMD performance canimprove the IMD performance of a wireless communication system operatingin a multi-mode and/or multi-band environment.

Improved switching device IMD performance can be desirable for wirelesscommunication devices operating in various wireless communicationstandards, for example for wireless communication devices operating inthe LTE communication standard. In some RF applications, it can bedesirable to improve linearity of switching devices operating inwireless communication devices that enable simultaneous transmission ofdata and voice communication. For example, improved IMD performance inswitching devices can be desirable for wireless communication devicesoperating in the LTE communication standard and performing simultaneoustransmission of voice and data communication (e.g., SVLTE).

High Power Handling Capability

In some RF applications, it can be desirable for RF switching devices tooperate under high power while reducing degradation of other deviceperformance parameters. In some embodiments, it can be desirable for RFswitching devices to operate under high power with improvedintermodulation distortion, insertion loss, and/or isolationperformance.

In some embodiments, an increased number of transistors can beimplemented in a switch arm segment of a switching device to enableimproved power handling capability of the switching device. For example,a switch arm segment can include an increased number of FETs connectedin series, an increased FET stack height, to enable improved deviceperformance under high power. However, in some embodiments, increasedFET stack height can degrade the switching device insertion lossperformance.

Examples of FET Structures and Fabrication Process Technologies:

A switching device can be implemented on-die, off-die, or somecombination thereon. A switching device can also be fabricated usingvarious technologies. In some embodiments, RF switching devices can befabricated with silicon or silicon-on-insulator (SOI) technology.

As described herein, an RF switching device can be implemented usingsilicon-on-insulator (SOI) technology. In some embodiments, SOItechnology can include a semiconductor substrate having an embeddedlayer of electrically insulating material, such as a buried oxide layerbeneath a silicon device layer. For example, an SOI substrate caninclude an oxide layer embedded below a silicon layer. Other insulatingmaterials known in the art can also be used.

Implementation of RF applications, such as an RF switching device, usingSOI technology can improve switching device performance. In someembodiments, SOI technology can enable reduced power consumption.Reduced power consumption can be desirable in RF applications, includingthose associated with wireless communication devices. SOI technology canenable reduced power consumption of device circuitry due to decreasedparasitic capacitance of transistors and interconnect metallization to asilicon substrate. Presence of a buried oxide layer can also reducejunction capacitance or use of high resistivity substrate, enablingreduced substrate related RF losses. Electrically isolated SOItransistors can facilitate stacking, contributing to decreased chipsize.

In some SOI FET configurations, each transistor can be configured as afinger-based device where the source and drain are rectangular shaped(in a plan view) and a gate structure extends between the source anddrain like a rectangular shaped finger. FIGS. 23A and 23B show plan andside sectional views of an example finger-based FET device implementedon SOI. As shown, FET devices described herein can include a p-type FETor an n-type FET. Thus, although some FET devices are described hereinas p-type devices, it will be understood that various conceptsassociated with such p-type devices can also apply to n-type devices.

As shown in FIGS. 23A and 23B, a pMOSFET can include an insulator layerformed on a semiconductor substrate. The insulator layer can be formedfrom materials such as silicon dioxide or sapphire. An n-well is shownto be formed in the insulator such that the exposed surface generallydefines a rectangular region. Source (S) and drain (D) are shown to bep-doped regions whose exposed surfaces generally define rectangles. Asshown, S/D regions can be configured so that source and drainfunctionalities are reversed.

FIGS. 23A and 23B further show that a gate (G) can be formed on then-well so as to be positioned between the source and the drain. Theexample gate is depicted as having a rectangular shape that extendsalong with the source and the drain. Also shown is an n-type bodycontact. Formations of the rectangular shaped well, source and drainregions, and the body contact can be achieved by a number of knowntechniques.

FIGS. 24A and 24B show plan and side sectional views of an example of amultiple-finger FET device implemented on SOI. Formations of rectangularshaped n-well, rectangular shaped p-doped regions, rectangular shapedgates, and n-type body contact can be achieved in manners similar tothose described in reference to FIGS. 23A and 23B.

The example multiple-finger FET device of FIGS. 24A and 24B can beconfigured so that the source regions are electrically connectedtogether to a source node, and the drain regions are connected togetherto a drain node. The gates can also be connected together to a gatenode. In such an example configuration, a common gate bias signal can beprovided through the gate node to control flow of current between thesource node and the drain node.

In some implementations, a plurality of the foregoing multi-finger FETdevices can be connected in series as a switch to allow handling of highpower RF signals. Each FET device can divide the overall voltage dropassociated with power dissipation at the connected FETs. A number ofsuch multi-finger FET devices can be selected based on, for example,power handling requirement of the switch.

Examples of Implementations in Products:

Various examples of FET-based switch circuits described herein can beimplemented in a number of different ways and at different productlevels. Some of such product implementations are described by way ofexamples.

Semiconductor Die Implementation

FIGS. 25A-25D schematically show non-limiting examples of suchimplementations on one or more semiconductor die. FIG. 25A shows that insome embodiments, a switch circuit 120 and a bias/coupling circuit 150having one or more features as described herein can be implemented on adie 800. FIG. 25B shows that in some embodiments, at least some of thebias/coupling circuit 150 can be implemented outside of the die 800 ofFIG. 25A.

FIG. 25C shows that in some embodiments, a switch circuit 120 having oneor more features as described herein can be implemented on a first die800 a, and a bias/coupling circuit 150 having one or more features asdescribed herein can be implemented on a second die 800 b. FIG. 25Dshows that in some embodiments, at least some of the bias/couplingcircuit 150 can be implemented outside of the first die 800 a of FIG.25C.

Packaged Module Implementation

In some embodiments, one or more die having one or more featuresdescribed herein can be implemented in a packaged module. An example ofsuch a module is shown in FIGS. 26A (plan view) and 26B (side view).Although described in the context of both of the switch circuit and thebias/coupling circuit being on the same die (e.g., example configurationof FIG. 25A), it will be understood that packaged modules can be basedon other configurations.

A module 810 is shown to include a packaging substrate 812. Such apackaging substrate can be configured to receive a plurality ofcomponents, and can include, for example, a laminate substrate. Thecomponents mounted on the packaging substrate 812 can include one ormore dies. In the example shown, a die 800 having a switching circuit120 and a bias/coupling circuit 150 is shown to be mounted on thepackaging substrate 812. The die 800 can be electrically connected toother parts of the module (and with each other where more than one dieis utilized) through connections such as connection-wirebonds 816. Suchconnection-wirebonds can be formed between contact pads 818 formed onthe die 800 and contact pads 814 formed on the packaging substrate 812.In some embodiments, one or more surface mounted devices (SMDs) 822 canbe mounted on the packaging substrate 812 to facilitate variousfunctionalities of the module 810.

In some embodiments, the packaging substrate 812 can include electricalconnection paths for interconnecting the various components with eachother and/or with contact pads for external connections. For example, aconnection path 832 is depicted as interconnecting the example SMD 822and the die 800. In another example, a connection path 832 is depictedas interconnecting the SMD 822 with an external-connection contact pad834. In yet another example a connection path 832 is depicted asinterconnecting the die 800 with ground-connection contact pads 836.

In some embodiments, a space above the packaging substrate 812 and thevarious components mounted thereon can be filled with an overmoldstructure 830. Such an overmold structure can provide a number ofdesirable functionalities, including protection for the components andwirebonds from external elements, and easier handling of the packagedmodule 810.

FIG. 27 shows a schematic diagram of an example switching configurationthat can be implemented in the module 810 described in reference toFIGS. 26A and 26B. In the example, the switch circuit 120 is depicted asbeing an SP9T switch, with the pole being connectable to an antenna andthe throws being connectable to various Rx and Tx paths. Such aconfiguration can facilitate, for example, multi-mode multi-bandoperations in wireless devices.

The module 810 can further include an interface for receiving power(e.g., supply voltage VDD) and control signals to facilitate operationof the switch circuit 120 and/or the bias/coupling circuit 150. In someimplementations, supply voltage and control signals can be applied tothe switch circuit 120 via the bias/coupling circuit 150.

Wireless Device Implementation

In some implementations, a device and/or a circuit having one or morefeatures described herein can be included in an RF device such as awireless device. Such a device and/or a circuit can be implementeddirectly in the wireless device, in a modular form as described herein,or in some combination thereof. In some embodiments, such a wirelessdevice can include, for example, a cellular phone, a smart-phone, ahand-held wireless device with or without phone functionality, awireless tablet, etc.

FIG. 28 schematically depicts an example wireless device 900 having oneor more advantageous features described herein. In the context ofvarious switches and various biasing/coupling configurations asdescribed herein, a switch 120 and a bias/coupling circuit 150 can bepart of a module 810. In some embodiments, such a switch module canfacilitate, for example, multi-band multi-mode operation of the wirelessdevice 900.

In the example wireless device 900, a power amplifier (PA) module 916having a plurality of PAs can provide an amplified RF signal to theswitch 120 (via a duplexer 920), and the switch 120 can route theamplified RF signal to an antenna. The PA module 916 can receive anunamplified RF signal from a transceiver 914 that can be configured andoperated in known manners. The transceiver can also be configured toprocess received signals. The transceiver 914 is shown to interact witha baseband sub-system 910 that is configured to provide conversionbetween data and/or voice signals suitable for a user and RF signalssuitable for the transceiver 914. The transceiver 914 is also shown tobe connected to a power management component 906 that is configured tomanage power for the operation of the wireless device 900. Such a powermanagement component can also control operations of the basebandsub-system 910 and the module 810.

The baseband sub-system 910 is shown to be connected to a user interface902 to facilitate various input and output of voice and/or data providedto and received from the user. The baseband sub-system 910 can also beconnected to a memory 904 that is configured to store data and/orinstructions to facilitate the operation of the wireless device, and/orto provide storage of information for the user.

In some embodiments, the duplexer 920 can allow transmit and receiveoperations to be performed simultaneously using a common antenna (e.g.,924). In FIG. 28, received signals are shown to be routed to “Rx” paths(not shown) that can include, for example, a low-noise amplifier (LNA).

A number of other wireless device configurations can utilize one or morefeatures described herein. For example, a wireless device does not needto be a multi-band device. In another example, a wireless device caninclude additional antennas such as diversity antenna, and additionalconnectivity features such as Wi-Fi, Bluetooth, and GPS.

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Additionally, the words “herein,” “above,” “below,” and words of similarimport, when used in this application, shall refer to this applicationas a whole and not to any particular portions of this application. Wherethe context permits, words in the above Detailed Description using thesingular or plural number may also include the plural or singular numberrespectively. The word “or” in reference to a list of two or more items,that word covers all of the following interpretations of the word: anyof the items in the list, all of the items in the list, and anycombination of the items in the list.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While some embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

1. A method for fabricating a switch device, the method comprising:forming a plurality of elements to include a first end element and asecond end element; and connecting the elements in series between afirst terminal and a second terminal, such that the first end element iselectrically connected to the first terminal and the second end elementis electrically connected to the second terminal, each element having aparameter such that the elements provide a distribution of parametervalues that decreases in magnitude from the first end element for atleast half of the elements to a minimum parameter value corresponding toan element between the first end element and the second end element, theminimum parameter value less than the parameter value of the second endelement, the parameter value of the first end element greater than orequal to the parameter value of the second end element.
 2. The method ofclaim 1 wherein the forming of the plurality of elements is tailoredsuch that the distribution of parameter values provides a desiredvoltage drop profile among the connected elements.
 3. The method ofclaim 2 wherein the desired voltage drop profile includes anapproximately uniform voltage drop profile.
 4. The method of claim 1wherein the forming of the plurality of elements is tailored such thatthe distribution of parameter values provides a desired capacitanceprofile among the connected elements.
 5. The method of claim 4 whereinthe desired capacitance profile includes an approximately uniformcapacitance profile.
 6. The method of claim 1 wherein the forming of theplurality of elements includes forming a plurality of respectivetransistors each having an active region, a source contact, a draincontact and a gate formed on the active region.
 7. The method of claim 6wherein the forming of the transistors includes forming of respectivesilicon-on-insulator transistors.
 8. The method of claim 6 wherein theforming of the transistors is tailored such that the parameter includesa width of the gate.
 9. The method of claim 6 wherein the forming of thetransistors includes forming each transistor to have a fingerconfiguration such that the gate includes a number of rectangular shapedgate fingers, each gate finger being between a rectangular shaped sourcefinger of the source contact and a rectangular shaped drain finger ofthe drain contact.
 10. The method of claim 9 wherein the forming of thetransistors is tailored such that the parameter includes a number offingers associated with the gate.
 11. The method of claim 1 wherein theforming of the plurality of elements includes forming a plurality ofrespective diodes.
 12. The method of claim 1 wherein the forming of theplurality of elements includes forming a plurality of respectivemicroelectromechanical systems (MEMS) devices.
 13. The method of claim 1wherein the forming of the plurality of elements is tailored such thatthe parameter value of the first end element is greater in magnitudethan the parameter value of the second end element.
 14. The method ofclaim 1 wherein the forming of the plurality of elements is tailoredsuch that the parameter value of the first end element is approximatelyequal in magnitude to the parameter value of the second end element. 15.The method of claim 14 wherein the distribution of parameter values isapproximately symmetric.
 16. A method for fabricating a semiconductordie, the method comprising: providing or forming a semiconductorsubstrate; and implementing a circuit on the semiconductor substrate,the implementing of the circuit including forming a plurality ofelements to include a first end element and a second end element, theimplementing of the circuit further including electrically connectingthe elements in series between a first terminal and a second terminal,such that the first end element is electrically connected to the firstterminal and the second end element is electrically connected to thesecond terminal, and such that each element has a parameter such thatthe elements provide a distribution of parameter values that decreasesin magnitude from the first end element for at least half of theelements to a minimum parameter value corresponding to an elementbetween the first end element and the second end element, the minimumparameter value less than the parameter value of the second end element,the parameter value of the first end element greater than or equal tothe parameter value of the second end element.
 17. The method of claim16 wherein the providing or forming of the semiconductor substrateincludes providing or forming a silicon-on-insulator substrate.
 18. Themethod of claim 17 wherein the forming of the plurality of elements ofthe circuit includes forming of a plurality of respective transistors, aplurality of respective diodes, or a plurality of microelectromechanicalsystems (MEMS) devices, on the silicon-on-insulator substrate.
 19. Themethod of claim 16 wherein the circuit implemented on the semiconductorsubstrate includes a switch circuit.
 20. A method for fabricating aradio-frequency module, the method comprising: providing or forming apackaging substrate; and implementing a circuit on the packagingsubstrate, such that the circuit includes a plurality of elements havinga first end element and a second end element, the circuit furtherincluding the elements electrically connected in series between a firstterminal and a second terminal, such that the first end element iselectrically connected to the first terminal and the second end elementis electrically connected to the second terminal, and such that eachelement has a parameter, the elements providing a distribution ofparameter values that decreases in magnitude from the first end elementfor at least half of the elements to a minimum parameter valuecorresponding to an element between the first end element and the secondend element, the minimum parameter value less than the parameter valueof the second end element, the parameter value of the first end elementgreater than or equal to the parameter value of the second end element.